无锡固电ISC 供应2SB757三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-40

V

V_CEO

Collector-Emitter Voltage                        

-40

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-15

A

I_B

Base Current- Continuous

-5

A

P_C

Collector Power Dissipation

@ T_C=25℃

80

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_thj-c

Thermal Resistance,Junction to Case

1.56

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -10mA; I_B= 0

-40

V

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= -0.1mA; I_E= 0

-40

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= -0.1mA; I_C= 0

-5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5.0A; I_B= -0.5A

-0.8

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -5.0A; I_B= -0.5A

-1.8

V

I_CBO

Collector Cutoff Current

V_CB= -40V; I_E=0

-10

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C=0

-10

μA

h_FE

DC Current Gain

I_C= -5A; V_CE= -2V

40

240

Switching times

t_on

Turn-on Time

I_C= -5A, I_B1= -I_B2= -1.5A,

R_L= 2Ω; P_W= 20μs Duty≤2%

1.0

μs

t_stg

Storage Time

2.0

μs

t_f

Fall Time

1.0

μs