无锡固电ISC供应2SD1298三极管
地区：江苏 无锡
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DESCRIPTION
·High DC Current Gain
: hFE= 200(Min.)@ IC= 6A, VCE= 2V
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·LowCollector Saturation Voltage
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 8 | V |
IC | Collector Current-Continuous | 10 | A |
ICM | Collector Current-Peak | 20 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Collector Power Dissipation @Ta=25℃ | 3.0 | ||
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA, IB= 0 | 400 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A, IB= 60mA |
|
| 1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 6A, IB= 60mA |
|
| 2.2 | V |
ICBO | Collector Cutoff current | VCB= 400V, IE= 0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 8V; IC= 0 |
|
| 100 | mA |
hFE | DC Current Gain | IC= 6A; VCE= 2V | 200 |
| 5000 |
|
Switching Times | ||||||
ton | Turn-On Time | IC= 6A,IB1= -IB2= 60mA |
| 1.5 |
| μs |
tstg | Storage Time |
| 7.0 |
| μs | |
tf | Fall Time |
| 4.0 |
| μs | |
是
ISC
2SD1298
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
