无锡固电ISC供应2SB772三极管

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DESCRIPTION                                             

·High Collector Current -IC= -3A

·High Collector-Emitter Breakdown Voltage-

  : V(BR)CEO= -30V(Min)

·Good Linearity of hFE

·LowSaturation Voltage

·Complement to Type 2SD882

 

APPLICATIONS

·Designed for use in the output stage of 3 watts audio amp-

lifier, voltage regulator, DC-DC converter and relay driver.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                      

-40

V

VCEO

Collector-Emitter Voltage                         

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3

A

ICP

Collector Current-Pulse

-7

A

PC

Collector Power Dissipation

@ TC=25

10

W

Collector Power Dissipation

@ Ta=25

1

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -2A; IB= -0.2A

 

 

-0.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -2A; IB= -0.2A

 

 

-2.0

V

ICBO

Collector Cutoff Current

VCB= -30V; IE= 0

 

 

-1.0

μA

IEBO

Emitter Cutoff Current

VEB= -3V; IC= 0

 

 

-1.0

μA

hFE-1

DC Current Gain

IC= -20mA ; VCE= -2V

30

 

 

 

hFE-2

DC Current Gain

IC= -1A ; VCE= -2V

60

 

400

 

fT

Current-Gain—Bandwidth Product

IC= -0.1A ; VCE= -5V

 

80

 

MHz

COB

Output Capacitance

IE=0; VCB= -10V, ftest= 1MHz

 

55

 

pF

 

u      hFE-2Classifications

R

Q

P

E

60-120

100-200

160-320

200-400

"
是否提供加工定制

品牌/商标

isc/iscsemi

型号/规格

2SB772

应用范围

放大

材料

硅(Si)

极性

PNP型

集电极允许电流ICM

-3(A)

集电极耗散功率PCM

10(W)

截止频率fT

80(MHz)

结构

平面型

封装形式

TO-126