无锡固电ISC 供应音响用大功率晶体管TIP36C(图)
地区：江苏 无锡
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DESCRIPTION
·DC Current Gain-
: hFE= 25(Min)@IC= -1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min)
·Complement to Type TIP35C
·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= -1.0A
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -25 | A |
ICM | Collector Current-peak | -40 | A |
IB | Base Current | -5 | A |
PC | Collector Power Dissipation@TC=25℃ | 125 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= -30mA ;IB= 0 | -100 |
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= -15A ;IB= -1.5A |
| -1.8 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -25A; IB= -5A |
| -4.0 | V |
VBE(on)-1 | Base-Emitter On Voltage | IC= -15A ; VCE= -4V |
| -2.0 | V |
VBE(on)-2 | Base-Emitter On Voltage | IC= -25A ; VCE= -4V |
| -4.0 | V |
ICEO | Collector Cutoff Current | VCE= -60V; IB= 0 |
| -1.0 | mA |
ICES | Collector Cutoff Current | VCE= -100V;VEB= 0 |
| -0.7 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
| -1.0 | mA |
hFE-1 | DC Current Gain | IC= -1.5A ; VCE= -4V | 25 |
|
|
hFE-2 | DC Current Gain | IC= -15A ; VCE= -4V | 15 | 75 |
|
fT | Current-Gain—Bandwidth Product | IC= -1A ; VCE= -10V;ftest= 1.0MHz | 3 |
| MHz |
是
ISC/ISCSEMI
TIP36C
放大
硅
PNP型
-25（A）
125（W）
3（MHz）
平面型
TO-3PN
塑料封装
