无锡固电ISC供应2SD113三极管

SYMBOL

PARAMETER

MAX

UNIT

V_CBO

Collector-Base Voltage                        

100

V

V_CEO

Collector-Emitter Voltage                        

80

V

V_EBO

Emitter-Base Voltage

10

V

I_C

Collector Current-Continuous

30

A

I_E

Emitter Current-Continuous

-30

A

I_B

Base Current-Continuous

5

A

P_C

Collector Power Dissipation

@T_C=25℃

200

W

T_j

Junction Temperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 50mA; R_BE=∞

80

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 50mA; I_C= 0

10

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 15A; I_B= 3A

1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 15A; I_B= 3A

2.5

V

I_CBO

Collector Cutoff Current

V_CB= 50V; I_E= 0

2

mA

I_EBO

Emitter Cutoff Current

V_EB= 10V; I_C= 0

50

mA

h_FE-1

DC Current Gain

I_C= 1A; V_CE= 5V

50

300

h_FE-2

DC Current Gain

I_C= 15A; V_CE= 5V

10

C_OB

Output Capacitance

I_E= 0; V_CB= 50V; f_test= 1.0MHz

400

pF

f_T

Current-Gain—Bandwidth Product

I_C= 1A; V_CE= 10V

1.5

MHz

O

Y

50-150

100-300