无锡固电ISC 供应2SA649三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-150

V

V_CEO

Collector-Emitter Voltage

-150

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous  

-7

A

I_CM

Collector Current-Peak  

-11

A

P_C

Collector Power Dissipation

@T_C=25℃

80

W

T_j

Junction Temperature

150

℃

T_stg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CBO

Collector-Base Breakdown Voltage

I_C= -1mA; I_E= 0

-150

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -25mA; I_B= 0

-150

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= -1mA; I_C= 0

-5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5A; I_B= -0.5A

-2.0

V

V_BE(sat)

Base-EmitterSaturationVoltage

I_C= -5A; I_B= -0.5A

-2.5

V

I_CBO

Collector Cutoff Current

V_CB= -150V; I_E= 0

-0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-0.1

mA

h_FE

DC Current Gain

I_C= -3A; V_CE= -5V

30

120

f_T

Current-Gain—Bandwidth Product

I_C= -1A; V_CE= -5V

10

MHz