无锡固电ISC 供应2SA764三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-60

V

V_CEO

Collector-Emitter Voltage                        

-60

V

V_EBO

Emitter-Base Voltage

-6

V

I_C

Collector Current-Continuous

-6

A

P_C

Total Power Dissipation

@ T_C=25℃

40

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -10mA; I_B= 0

-60

V

V_(BR)CBO

Collector-BaseBreakdownVoltage

I_C= -1mA; I_E= 0

-60

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -4A; I_B= -0.4A

-1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -4A; I_B= -0.4A

-2.0

V

I_CBO

Collector Cutoff Current

V_CB= -60V; I_E= 0

-10

μA

I_EBO

Emitter Cutoff Current

V_EB= -6V; I_C= 0

-10

μA

h_FE

DC Current Gain

I_C= -1A; V_CE= -4V

50

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A; V_CE= -12V

10

MHz