无锡固电ISC 供应2SB1063三极管

地区:江苏 无锡
认证:

无锡固电半导体股份有限公司

金牌会员9年

全部产品 进入商铺
DESCRIPTION                                             

·Low Collector Saturation Voltage-

: VCE(sat)= -2.0V(Max)@IC= -3A

·Good Linearity of hFE

·Wide Area of Safe Operation

·Complement to Type 2SD1499

 

 

APPLICATIONS

·Designed for high power amplification.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

-100

V

VCEO

Collector-Emitter Voltage                        

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

-8

A

PC

Collector Power Dissipation

@ Ta=25

2

W

Collector Power Dissipation

@ TC=25

40

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

 

 

-2.0

V

VBE(on)

Base-Emitter On Voltage

IC= -3A; VCE= -5V

 

 

-1.8

V

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

 

 

-50

μA

IEBO

Emitter Cutoff Current

VEB= -3V; IC= 0

 

 

-50

μA

hFE-1

DC Current Gain

IC= -20mA; VCE= -5V

20

 

 

 

hFE-2

DC Current Gain

IC= -1A; VCE= -5V

40

 

200

 

hFE-3

DC Current Gain

IC= -3A; VCE= -5V

20

 

 

 

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

 

170

 

pF

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -5V; ftest=1MHz

 

20

 

MHz

 

u hFE-2Classifications

R

Q

P

40-80

60-120

100-200

 

是否提供加工定制

品牌/商标

isc

型号/规格

2SB1063

应用范围

放大

材料

硅(Si)

极性

PNP型

结构

平面型

封装形式

直插型

封装材料

塑料封装