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DESCRIPTION
·High DC Current Gain-
: hFE= 30-120@IC= 5A
·Excellent Safe Operating Area
·High Current Capability
APPLICATIONS
·Designed for use in switching-control amplifiers, power
gates,switching regulators, converters, and inverters.
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 100mA ;IB= 0 | 80 |
|
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 5A; IB= 0.5A |
|
| 0.5 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 10A; IB= 1A |
|
| 1.0 | V |
VBE(sat)-1 | Base-Emitter Saturation Voltage | IC= 5A; IB= 0.5A |
|
| 1.2 | V |
VBE(sat)-2 | Base-Emitter Saturation Voltage | IC= 10A; IB= 1A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB=80V; IE=0 |
|
| 1.0 | mA |
ICEV | Collector Cutoff Current | VCE=80V;VBE=-1.5V VCE=80V;VBE=-1.5V;TC=150℃ |
|
| 1.0 3.0 | mA |
IEBO | Emitter Cutoff current | VEB=6V; IC=0 |
|
| 1.0 | mA |
hFE-1 | DC Current Gain | IC= 1A ; VCE= 2V | 30 |
|
|
|
hFE-2 | DC Current Gain | IC= 5A ; VCE= 5V | 30 |
| 120 |
|
hFE-3 | DC Current Gain | IC= 10A ; VCE= 5V | 20 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.5 A;VCE= 5V;ftest= 5MHz |
| 70 |
| MHz |
Switching Times | ||||||
ton | Turn-On Time | IC= 5A; IB1= -IB2= 0.5A, VCC=30V |
|
| 0.35 | μs |
tstg | Storage Time |
|
| 1.3 | μs | |
tf | Fall Time |
|
| 0.2 | μs |
是
ISC/ISCSEMI
BDX92
放大
硅(Si)
NPN型
10(A)
60(W)
70(MHz)
扩散型
TO-3
金属封装