无锡固电ISC 供应三极管2SB945

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-130

V

V_CEO

Collector-Emitter Voltage                        

-80

V

V_EBO

Emitter-Base Voltage

-7

V

I_C

Collector Current-Continuous

-5

A

I_CM

Collector Current-Peak

-10

A

P_C

Collector Power Dissipation

@ T_a=25℃

2

W

Collector Power Dissipation

@ T_C=25℃

40

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -10mA ; I_B= 0

-80

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -4A; I_B= -0.2A

-0.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -4A; I_B= -0.2A

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -100V ; I_E= 0

-10

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V ; I_C= 0

-50

μA

h_FE-1

DC Current Gain

I_C= -0.1A ; V_CE= -2V

45

h_FE-2

DC Current Gain

I_C= -2A ; V_CE= -2V

90

260

f_T

Current-Gain—Bandwidth Product

I_C=-0.5A; V_CE= -10V;f_test=10MHz

30

MHz

Switching times

t_on

Turn-on Time

I_C= -2.0A ,I_B1= -I_B2= -0.2A,

0.13

μs

t_stg

Storage Time

0.5

μs

t_f

Fall Time

0.13

μs

Q

P

90-180

130-260