无锡固电ISC 供应2SB696三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-150

V

V_CEO

Collector-Emitter Voltage

-120

V

V_EBO

Emitter-Base Voltage

-6

V

I_C

Collector Current-Continuous

-8

A

I_CM

Emitter Current-Peak

-12

A

P_C

Collector Power Dissipation

@T_C=25℃

80

W

T_J

Junction Temperature

150

℃

T_stg

Storage Temperature

-40~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -5mA; R_BE=∞

-120

V

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -50mA; R_BE=∞

-120

V

V_(BR)CBO

Collector-BaseBreakdownVoltage

I_C= -5mA; I_E= 0

-150

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= -5mA; I_C= 0

-6

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5A; I_B= -0.5A

-0.6

V

V_BE(on)

Base-Emitter On Voltage

I_C= -1A; V_CE= -5V

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -80V; I_E= 0

-0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= -4V; I_C= 0

-0.1

mA

h_FE

DC Current Gain

I_C= -1A; V_CE= -5V

40

320

f_T

Current-Gain—Bandwidth Product

I_C= -1A; V_CE= -5V

15

MHz

C

D

E

F

40-80

60-120

100-200

160-320