无锡固电ISC 供应2SA1060三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-80

V

V_CEO

Collector-Emitter Voltage                        

-80

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-5

A

I_CM

Collector Current-Peak

-8

A

P_C

Collector Power Dissipation

@ T_C=25℃

60

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -30mA ; I_B= 0

-80

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -3A; I_B= -0.3A

-2.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= -3A ; V_CE= -5V

-1.8

V

I_CBO

Collector Cutoff Current

V_CB= -80V ; I_E= 0

-50

μA

I_EBO

Emitter Cutoff Current

V_EB= -3V; I_C= 0

-50

μA

h_FE-1

DC Current Gain

I_C= -0.02A ; V_CE= -5V

20

h_FE-2

DC Current Gain

I_C= -1A ; V_CE= -5V

40

220

h_FE-3

DC Current Gain

I_C= -3A; V_CE= -5V

20

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A; V_CE= -5V

20

MHz

R

Q

P

40-80

60-120

100-200