图文详情
产品属性
相关推荐
·Collector-Base Breakdown Voltage-
:V(BR)CBO= 500V(Min.)
·Low Collector Saturation Voltage
·Wide Area of Safe Operation
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCES | Collector-Emitter Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 12 | A |
ICM | Collector Current-Peak | 22 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation @Ta=25℃ | 3 | W |
Collector Power Dissipation @TC=25℃ | 100 | ||
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA; IB= 0 | 400 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 7A; IB= 1.4A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 7A; IB= 1.4A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 100 | μA |
hFE-1 | DC Current Gain | IC= 0.1A; VCE= 5V | 15 |
|
|
|
hFE-2 | DC Current Gain | IC= 7A; VCE= 5V | 8 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.5A; VCE= 10V |
| 30 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | IC= 7A; IB1= 1.4A; IB2= -2.8A; VCC= 150V |
|
| 0.7 | μs |
ts | Storage Time |
|
| 2.0 | μs | |
tf | Fall Time |
|
| 0.3 | μs |
"
是
ISC
2SC3873
放大
硅(Si)
NPN型
平面型
直插型
塑料封装