无锡固电ISC供应2SC3873三极管

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DESCRIPTION                                             ·

·Collector-Base Breakdown Voltage-

:V(BR)CBO= 500V(Min.)

·Low Collector Saturation Voltage

·Wide Area of Safe Operation

·High Speed Switching

 

 

APPLICATIONS

·Designed for high speed switching applications.

 

 

Absolute maximum ratings (Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

500

V

VCES

Collector-Emitter Voltage

500

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

12

A

ICM

Collector Current-Peak

22

A

IB

Base Current-Continuous

5

A

PC

Collector Power Dissipation

@Ta=25

3

W

Collector Power Dissipation

@TC=25

100

Tj

Junction Temperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA; IB= 0

400

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 7A; IB= 1.4A

 

 

1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 7A; IB= 1.4A

 

 

1.5

V

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

 

 

100

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

 

 

100

μA

hFE-1

DC Current Gain

IC= 0.1A; VCE= 5V

15

 

 

 

hFE-2

DC Current Gain

IC= 7A; VCE= 5V

8

 

 

 

fT

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V

 

30

 

MHz

Switching Times

ton

Turn-on Time

IC= 7A; IB1= 1.4A; IB2= -2.8A;

VCC= 150V

 

 

0.7

μs

ts

Storage Time

 

 

2.0

μs

tf

Fall Time

 

 

0.3

μs

 

"
是否提供加工定制

品牌/商标

ISC

型号/规格

2SC3873

应用范围

放大

材料

硅(Si)

极性

NPN型

结构

平面型

封装形式

直插型

封装材料

塑料封装