无锡固电ISC 供应三极管2SB531
地区：江苏 无锡
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·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·High Power Dissipation-
: PC= 50W(Max)@TC=25℃
·Complement to Type 2SD371
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -6 | A |
IE | Emitter Current-Continuous | 6 | A |
PC | Collector Power Dissipation @TC=25℃ | 50 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -0.1A; IB= 0 | -100 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -10mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -2.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -4A; VCE= -5V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -60V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -0.1 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -5V | 40 |
| 240 |
|
hFE-2 | DC Current Gain | IC= -4A; VCE= -5V | 20 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 180 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -5V |
| 8 |
| MHz |
u hFEClassifications
R | O | Y |
40-80 | 70-140 | 120-240 |
"
是
ISC
2SB531
放大
硅(Si)
PNP型
平面型
直插型
金属封装
