无锡固电ISC供应2S*689三*管

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D*CRIPTION                                             

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V(Min)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 2.0V(Max)@ IC= 6A

·Complement to T*e 2SA1804

 

 

APPLICATIONS

·Power amplifier applications

·Recommend for 55W high fidelity audio frequency

amplifier output stage applications

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SY*OL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

120

V

VCEO

Collector-Emitter Voltage                        

120

V

VEBO

Emitter-Base voltage

5

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

16

A

IB

Base Current-Continuous

0.8

A

PC

Collector Power Dissipation

@ TC=25

70

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELE*RICAL CHARA*ERISTICS

TC=25unless otherwise specified

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage            

IC= 50mA; IB= 0

120

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 6A; IB= 0.6A

 

 

2.0

V

VBE(on)

Base-Emitter On Voltage

IC= 4A; VCE= 5V

 

 

1.5

V

ICBO

Collector Cutoff Current

VCB= 120V; IE= 0

 

 

5.0

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

 

 

5.0

μA

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

55

 

160

 

hFE-2

DC Current Gain

IC= 4A; VCE= 5V

35

 

 

 

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 5V

 

30

 

MHz

COB

Output Capacitance

IE= 0; VCB= 10V, ftest= 1MHz

 

190

 

pF

 

u hFE-1Cl*ifications

R

O

55-110

80-160

 

是否提供**

品牌/商标

ISC

型号/规格

2S*689

应用范围

放大

材料

硅(Si)

*性

NPN型

结构

平面型

封装形式

直插型

封装材料

塑料封装