无锡固电ISC

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-100

V

V_CEO

Collector-Emitter Voltage

-100

V

V_EBO

Emitter-Base Voltage

-7

V

I_C

Collector Current-Continuous

-16

A

I_CM

Collector Current-Peak

-20

A

I_B

Base Current-Continuous

-5

A

P_C

Collector Power Dissipation@T_C=25℃

200

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

0.875

℃/W

SY*OL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C=-200mA; I_B=0

-100

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -8A; I_B= -0.8A

-1.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -8A; I_B= -0.8A

-1.8

V

V_BE(on)

Base-Emitter On Voltage

I_C= -8A; V_CE= -2V

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -80V; I_B= 0

-1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= -7V; I_C= 0

-1.0

mA

h_FE-1

DC Current Gain

I_C= -5A; V_CE= -4V

25

h_FE-2

DC Current Gain

I_C= -10A; V_CE= -4V

15

f_T

Current Gain-Bandwidth Product

I_C= -1A; V_CE= -20V

1

MHz