无锡固电ISC供应2SD428三*管

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D*CRIPTION                                             

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·High Power Dissipation-

: PC= 60W(Max)@TC=25

·Complement to T*e 2*558

 

 

APPLICATIONS

·Designed for power amplifier applications.

·Recommended for 40W high-fidelity audio frequency

amplifier output stage.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SY*OL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

7

A

IE

Emitter Current-Continuous

-7

A

PC

Collector Power Dissipation

@TC=25

60

W

TJ

Junction Temperature

150

Tstg

Storage Temperature

-65~150

 

ELE*RICAL CHARA*ERISTICS

Tj=25unless otherwise specified

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 0.1A; IB= 0

100

 

 

V

V(BR)EBO

Emitter-BaseBreakdownVoltage

IE= 10mA; IC= 0

5

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

 

 

2.5

V

VBE(on)

Base-Emitter On Voltage

IC= 5A; VCE= 5V

 

 

2.0

V

ICBO

Collector Cutoff Current

VCB= 50V; IE= 0

 

 

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

 

 

0.1

mA

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

40

 

140

 

hFE-2

DC Current Gain

IC= 5A; VCE= 5V

15

 

 

 

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

 

140

 

pF

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 5V

 

7

 

MHz

 

u hFE-1Cl*ifications

R

O

40-80

70-140

 

是否提供**

品牌/商标

ISC

型号/规格

2SD428

应用范围

放大

材料

硅(Si)

*性

NPN型

结构

平面型

封装形式

直插型

封装材料

金属封装