无锡固电ISC 供应三*管2SA1063

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-150

V

V_CEO

Collector-Emitter Voltage

-120

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous  

-6

A

P_C

Collector Power Dissipation

@T_C=25℃

80

W

T_j

Junction Temperature

150

℃

T_stg

Storage Temperature

-65~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -100mA; I_B= 0

-120

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -6A; I_B= -0.6A

-2.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= -6A ; V_CE= -5V

-2.5

V

I_CBO

Collector Cutoff Current

V_CB= -70V; I_E= 0

-1

mA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-2

mA

h_FE-1

DC Current Gain

I_C= -1A ; V_CE= -5V

40

280

h_FE-2

DC Current Gain

I_C= -6A ; V_CE= -5V

20

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A ; V_CE= -10V

50

MHz

R

Q

P

O

40-80

60-120

90-180

140-280