图文详情
产品属性
相关推荐
·Collector-Base Breakdown Voltage-
: V(BR)CBO= -150V(Min)
·High Collector Power Dissipation-
·Complement to T*e 2SC1450
APPLICATIONS
·Line-operated vertical deflection output
·Medium power amplifier
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -150 | V |
VCEO | Collector-Emitter Voltage | -150 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -0.4 | A |
ICM | Collector Current-Peak | -1.2 | A |
PC | Total Power Dissipation @ TC=25℃ | 20 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CER | Collector-Emitter Breakdown Voltage | IC= -0.2A; L= 25mH, RBE= 5kΩ | -150 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -1A; IB= -0.1A |
|
| -1.0 | V |
VBE(on)-1 | Base-Emitter On Voltage | IC= -0.1A; VCE= -5V |
|
| -0.8 | V |
VBE(on)-2 | Base-Emitter On Voltage | IC= -0.5A; VCE= -5V |
|
| -1.0 | V |
ICBO | Collector Cutoff Current | VCB= -60V; IE= 0 |
|
| -30 | μA |
hFE-1 | DC Current Gain | IC= -0.1A; VCE= -5V | 35 |
| 150 |
|
hFE-2 | DC Current Gain | IC= -0.5A; VCE= -5V | 35 |
|
|
|
fT | Current-Gain—Bandwidth Product | IE= 0.1A; VCB= -10V |
| 15 |
| MHz |
"
是
ISC
2SA766
放大
硅(Si)
PNP型
平面型
直插型
金属封装