无锡固电ISC供应2SC3527三*管

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D*CRIPTION                                             

·Low Collector Saturation Voltage

·High Collector Current

·Good Linearity of hFE

 

 

APPLICATIONS

·Designed forswitching regulator and high voltage

switching applications.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SY*OL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

500

V

VCEO

Collector-Emitter Voltage                        

400

V

VEBO

Emitter-Base voltage

7

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

25

A

IB

Base Current-Continuous

6

A

PC

Collector Power Dissipation

@ TC=25

100

W

Collector Power Dissipation

@ Ta=25

3

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELE*RICAL CHARA*ERISTICS

TC=25unless otherwise specified

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.5A; L= 25mH

400

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 7A; IB= 1.4A

 

 

1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 7A; IB= 1.4A

 

 

1.5

V

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

 

 

100

μA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

 

 

100

μA

hFE-1

DC Current Gain

IC= 2A; VCE= 5V

15

 

 

 

hFE-2

DC Current Gain

IC= 7A; VCE= 5V

10

 

 

 

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 10V; f= 1MHz

 

15

 

MHz

Switching times

ton

Turn-On Time

IC= 7A; IB1= 1.4A, IB2= -1.4A;

VCC= 125V

 

 

1.0

μs

tstg

Storage Time

 

 

2.5

μs

tf

Fall Time

 

 

1.0

μs

 

是否提供**

品牌/商标

ISC

型号/规格

2SC3527

应用范围

放大

材料

硅(Si)

*性

NPN型

结构

平面型

封装形式

直插型

封装材料

塑料封装