无锡固电ISC 供应三*管2SA969

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-160

V

V_CEO

Collector-Emitter Voltage                        

-160

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-1.5

A

I_E

Emitter Current- Continuous

1.5

A

P_C

Total Power Dissipation

@ T_C=25℃

25

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -10mA ; I_B= 0

-160

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= -1mA ; I_C= 0

-5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -0.5A; I_B= -50mA

-1.5

V

V_BE(on)

Base-Emitter On Voltage

I_C= -0.5A ; V_CE= -5V

-1.0

V

I_CBO

Collector Cutoff Current

V_CB= -160V ; I_E= 0

-1.0

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-1.0

μA

h_FE

DC Current Gain

I_C= -0.1A ; V_CE= -5V

70

240

C_OB

Output Capacitance

I_E= 0; V_CB= -10V; f_test= 1MHz

30

pF

f_T

Current-Gain—Bandwidth Product

I_C= -0.1A;V_CE= -10V

100

MHz

O

Y

70-140

120-240