无锡固电ISC供应2SD1556三*管

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D*CRIPTION                                             

·High Breakdown Voltage-

: VCBO= 1500V (Min)

·High Switching Speed

·Low Saturation Voltage

·Built-in Damper Diode

 

 

APPLICATIONS

·Designed for color TV horizontal output applications

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SY*OL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                        

1500

V

VCEO

Collector-Emitter Voltage                        

600

V

VEBO

Emitter-Base Voltage

   5

V

IC

Collector Current- Continuous

6

A

IB

Base Current- Continuous

3

A

PC

Collector Power Dissipation

@ TC=25

50

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELE*RICAL CHARA*ERISTICS

TC=25unless otherwise specified

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 200mA ; IC= 0

5

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1A

 

 

5.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

 

 

1.5

V

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

 

 

10

μA

hFE

DC Current Gain

IC= 1A ; VCE= 5V

8

 

 

 

VECF

C-E Diode Forward Voltage

IF= 6A

 

 

2.0

V

fT

Current-Gain—Bandwidth Product

IC= 0.1A ; VCE= 10V

 

3

 

MHz

COB

Output Capacitance

IE= 0 ; VCB= 10V;ftest= 1.0MHz

 

165

 

pF

tf

Fall Time

ICP= 5A , IB1(end)= 1A

 

0.5

1.0

μs

 

是否提供**

品牌/商标

ISC

型号/规格

2SD1556

应用范围

功率

材料

硅(Si)

*性

NPN型

结构

平面型

封装形式

直插型

封装材料

塑料封装