无锡固电ISC供应2SD1556三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                        

1500

V

V_CEO

Collector-Emitter Voltage                        

600

V

V_EBO

Emitter-Base Voltage

   5

V

I_C

Collector Current- Continuous

6

A

I_B

Base Current- Continuous

3

A

P_C

Collector Power Dissipation

@ T_C=25℃

50

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 200mA ; I_C= 0

5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 1A

5.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 5A; I_B= 1A

1.5

V

I_CBO

Collector Cutoff Current

V_CB= 500V; I_E= 0

10

μA

h_FE

DC Current Gain

I_C= 1A ; V_CE= 5V

8

V_ECF

C-E Diode Forward Voltage

I_F= 6A

2.0

V

f_T

Current-Gain—Bandwidth Product

I_C= 0.1A ; V_CE= 10V

3

MHz

C_OB

Output Capacitance

I_E= 0 ; V_CB= 10V;f_test= 1.0MHz

165

pF

t_f

Fall Time

I_CP= 5A , I_B1(end)= 1A

0.5

1.0

μs