无锡固电ISC供应高压复合晶体管 BU941P

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

500

V

V_CEO

Collector-Emitter Voltage

400

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current- Continuous

15

A

I_CM

Collector Current-Peak

30

A

I_B

Base Current  

1

A

I_BM

Base Current-Peak

5

A

P_C

Collector Power Dissipation

@T_C=25℃

155

W

T_j

Junction Temperature

175

℃

T_stg

StorageTemperature Range

-65~175

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 0.1A; I_B= 0;L= 10mH

400

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 8 A; I_B= 100mA

1.6

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 10 A; I_B= 250mA

1.8

V

V_CE(sat)-3

Collector-Emitter Saturation Voltage

I_C= 12 A; I_B= 300mA

2.0

V

V_BE(sat)-1

Base-Emitter Saturation Voltage

I_C= 8 A; I_B= 100mA

2.2

V

V_BE(sat)-2

Base-Emitter Saturation Voltage

I_C= 10 A; I_B= 250mA

2.5

V

V_BE(sat)-3

Base-Emitter Saturation Voltage

I_C= 12 A; I_B= 300mA

2.7

V

I_C*

Collector Cutoff Current

V_CE= 500V;V_BE= 0

V_CE= 500V;V_BE= 0;T_j= 125℃

0.1

0.5

mA

I_CEO

Collector Cutoff Current

V_CE= 450V; I_B= 0

V_CE= 450V; I_B= 0;T_j= 125℃

0.1

0.5

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

20

mA

h_FE

DC Current Gain

I_C= 5A ; V_CE= 10V

300

V_ECF

C-E Diode Forward Voltage

I_F= 10A

2.5

V