无锡固电ISC 供应BU931三*管

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D*CRIPTION        

·High Voltage

·DARLINGTON

 

APPLICATIONS

·High ruggedness electronic ignitions

·High voltage ignition coil driver

 

Absolute maximum ratings (Ta=25)

SY*OL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

500

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

15

A

ICM

Collector Current-peak

30

A

IB

Base Current

1

A

IBM

Base Current-peak

5

A

PC

Collector Power Dissipation

@TC=25

175

W

Tj

Junction Temperature

200

Tstg

StorageTemperature Range

-65~200

 

THERMAL CHARA*ERISTICS

SY*OL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.0

/W

 

ELE*RICAL CHARA*ERISTICS

TC=25unless otherwise specified

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.1A; IB= 0;L= 10mH

400

 

 

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 7A; IB= 70mA

 

 

1.6

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 8 A; IB= 100mA

 

 

1.8

V

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 10 A; IB= 250mA

 

 

1.8

V

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 7A; IB= 70mA

 

 

2.2

V

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 8 A; IB= 100mA

 

 

2.4

V

VBE(sat)-3

Base-Emitter Saturation Voltage

IC= 10A; IB= 250mA

 

 

2.5

V

IC*

Collector Cutoff Current

VCE= 500V;VBE= 0

VCE= 500V;VBE= 0;Tj= 125

 

 

0.1

0.5

mA

ICEO

Collector Cutoff Current

VCE= 450V;IB= 0

VCE= 450V;IB= 0;Tj= 125

 

 

0.1

0.5

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

 

 

20

mA

hFE

DC Current Gain

IC= 5A ; VCE= 10V

300

 

 

 

VECF

C-E Diode Forward Voltage

IF= 10A

 

 

2.5

V

 

"
是否提供**

品牌/商标

ISC

型号/规格

BU931

应用范围

放大

材料

硅(Si)

*性

NPN型

结构

平面型

封装形式

直插型

封装材料

金属封装