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产品属性
相关推荐
·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@ IC= -3A
·High Switching Speed
·Complement to T*e 2SC3540
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -80 | V |
VEBO | Emitter-Base Voltage | -7 | V |
IC | Collector Current-Continuous | -5 | A |
ICM | Collector Current-Pulse | -8 | A |
PC | Collector Power Dissipation @Ta=25℃ | 2 | W |
Collector Power Dissipation @TC=25℃ | 25 | ||
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
Tj=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA; IB= 0 | -80 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -3A; IB= -150mA |
|
| -0.4 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -3A; IB= -150mA |
|
| -1.2 | V |
ICBO | Collector Cutoff Current | VCB= -100V; IE= 0 |
|
| -1 | μA |
IEBO | Emitter Cutoff Current | VEB= -7V; IC= 0 |
|
| -1 | μA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -1V | 70 |
| 240 |
|
hFE-2 | DC Current Gain | IC= -3A; VCE= -1V | 30 |
|
|
|
fT | Current-Gain—Bandwidth Product | IE= 1A; VCE= -4V |
| 60 |
| MHz |
COB | Output Capacitance | IE= 0; VCB= -10V; ftest= 1MHz |
| 200 |
| pF |
Switching times | ||||||
ton | Turn-on Time | RL= 10Ω, VCC=-30V IB1=-IB2= -150mA,Duty Cycle≤1% |
| 0.2 |
| μs |
tstg | Storage Time |
| 1.0 |
| μs | |
tf | Fall Time |
| 0.1 |
| μs
|
u hFE-1Cl*ifications
O | Y |
70-140 | 120-240 |
是
ISC
2SA1388
放大
硅(Si)
PNP型
平面型
直插型
塑料封装