无锡固电ISC 供应2SA1388三*管

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D*CRIPTION                                             

·Low Collector Saturation Voltage-

: VCE(sat)= -0.4V(Max)@ IC= -3A

·High Switching Speed

·Complement to T*e 2SC3540

 

 

APPLICATIONS

·Designed for high current switching applications.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SY*OL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous  

-5

A

ICM

Collector Current-Pulse  

-8

A

PC

Collector Power Dissipation

@Ta=25

2

W

Collector Power Dissipation

@TC=25

25

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55~150

 

ELE*RICAL CHARA*ERISTICS

Tj=25unless otherwise specified

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -10mA; IB= 0

-80

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -150mA

 

 

-0.4

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -3A; IB= -150mA

 

 

-1.2

V

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

 

 

-1

μA

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

 

 

-1

μA

hFE-1

DC Current Gain

IC= -1A; VCE= -1V

70

 

240

 

hFE-2

DC Current Gain

IC= -3A; VCE= -1V

30

 

 

 

fT

Current-Gain—Bandwidth Product

IE= 1A; VCE= -4V

 

60

 

MHz

COB

Output Capacitance

IE= 0; VCB= -10V; ftest= 1MHz

 

200

 

pF

Switching times

ton

Turn-on Time

RL= 10Ω, VCC=-30V

IB1=-IB2= -150mA,Duty Cycle1%

 

0.2

 

μs

tstg

Storage Time

 

1.0

 

μs

tf

Fall Time

 

0.1

 

μs

 

 

u hFE-1Cl*ifications

O

Y

70-140

120-240

 
是否提供**

品牌/商标

ISC

型号/规格

2SA1388

应用范围

放大

材料

硅(Si)

*性

PNP型

结构

平面型

封装形式

直插型

封装材料

塑料封装