无锡固电ISC 供应2SD1789三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CEO

Collector-Emitter Voltage  

200

V

V_CBO

Collector-Base Voltage

200

V

V_EBO

Emitter-Base Voltage

7

V

I_C

Collector Current-Continunous  

4

A

I_CM

Collector Current-Peak

6

A

I_B

Base Current-Continunous  

0.3

A

I_BM

Base Current-Peak  

0.5

A

P_C

Collector Power Dissipation

@T_C=25℃

25

W

T_j

Junction Temperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 50mA; I_B= 0

200

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 1A; I_B= 2mA

1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 1A; I_B= 2mA

2.0

V

I_CBO

Collector Cutoff Current

V_CB= 200V; I_E= 0

0.1

mA

I_CEO

Collector Cutoff Current

V_CE= 200V; I_B= 0

0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= 7V; I_C= 0

5

mA

h_FE

DC Current Gain

I_C= 1A, V_CE= 3V

1500

30000

f_T

Current-Gain—Bandwidth Product

I_C= 0.4A ; V_CE= 10V

20

MHz

Switching Times; Resistive Load

t_on

Turn-On Time

I_C= 1A;I_B1= -I_B2= 2mA

V_BB2= 4V; R_L= 25Ω

2

μs

t_s

Storage Time

12

μs

t_f

Fall Time

5

μs