无锡固电ISC供应2*1287
地区：江苏 无锡
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D*CRIPTION
·High DC Current Gain-
:hFE= 1000(Min)@IC= -1A
·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= -100V(Min)
·Low Collector-Emitter Saturation Voltage
:VCE(sat)= -1.5V(Max)@ IC= -1A
·Complement to T*e 2SD1765
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -8 | V |
IC | Collector Current-Continuous | -2 | A |
ICM | Collector Current-Peak | -3 | A |
PC | Collector Power Dissipation Ta=25℃ | 2 | W |
Collector Power Dissipation TC=25℃ | 20 | ||
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -5mA, IB= 0 | -100 |
| V | |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -50μA, IE= 0 | -100 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -1A; IB= -1mA |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -7V; IC= 0 |
|
| -3 | mA |
hFE | DC Current Gain | IC= -1A; VCE= -2V | 1000 |
| 10000 |
|
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 35 |
| pF |
是
ISC
2*1287
放大
硅(Si)
PNP型
平面型
直插型
塑料封装
