无锡固电ISC 供应2*1344三*管
地区：江苏 无锡
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相关推荐
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·HighDC Current Gain-
: hFE=1000(Min)@ (VCE= -3V, IC= -2A)
·Complement to T*e 2SD2025
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -7 | V |
IC | Collector Current-Continuous | -8 | A |
ICM | Collector Current-Peak | -10 | A |
PC | Collector Power Dissipation @Ta=25℃ | 2 | W |
Collector Power Dissipation @TC=25℃ | 30 | ||
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
Tj=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -5mA; IB= 0 | -100 |
| V | |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -50μA; IE= 0 | -100 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -3A; IB= -6mA |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -3 | mA |
hFE | DC Current Gain | IC= -2A; VCE= -3V | 1000 |
| 20000 |
|
COB | Output Capacitance | IE= 0; VCB= -10V; ftest= 1MHz |
| 90 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= 0.5A; VCE= -5V; ftest= 10MHz |
| 12 |
| MHz |
是
ISC
2*1344
放大
硅(Si)
PNP型
平面型
直插型
塑料封装
