无锡固电ISC供应2SD1290三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

1500

V

V_C*

Collector-Emitter Voltage

1500

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

3

A

I_CM

Collector Current-Peak

10

A

P_C

Collector Power Dissipation

@T_C=25℃

50

W

T_j

Junction Temperature

130

℃

T_stg

StorageTemperature Range

-55-130

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 500mA; I_C= 0

5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 2A; I_B= 0.75A

5.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 2A; I_B= 0.75A

1.5

V

h_FE

DC Current Gain

I_C= 2A; V_CE= 10V

3

8

I_CBO

Collector Cutoff Current

V_CB= 750V; I_E= 0

V_CB= 1500V; I_E= 0

50

1.0

μA

mA

V_ECF

C-E Diode Forward Voltage

I_F= 4A

2.2

V

Switching Times

t_s

Storage Time

I_C= 2A;I_Leak= 0.75A; L_B= 5μH

7

μs

t_f

Fall Time

1

μs