无锡固电ISC TIP126三*管

D*CRIPTION

·High DC Current Gain-

: h_FE= 1000(Min)@I_C= -3A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -80V(Min)

·Low Collector-Emitter Saturation Voltage-

:V_CE(sat)= -2.0V(Max)@ I_C= -3A

= -4.0V(Max)@ I_C= -5A

·Complement to T*e TIP121

APPLICATIONS

·Designed for general purpose amplifier and low speed

switching applications.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-80	V
V_CEO	Collector-Emitter Voltage	-80	V
V_EBO	Emitter-Base Voltage	-5	V
I_C	Collector Current-Continuous	-5	A
I_CM	Collector Current-Peak	-8	A
I_B	Base Current-DC	-120	mA
P_C	Collector Power Dissipation T_C=25℃	65	W
P_C	Collector Power Dissipation T_a=25℃	2	W
T_j	Junction Temperature	150	℃
T_stg	StorageTemperature Range	-65~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= -0.1A, I_B= 0	-80			V
V_CE(_sat_)-1	Collector-Emitter Saturation Voltage	I_C= -3A, I_B= -12mA			-2.0	V
V_CE_(sat)-2	Collector-Emitter Saturation voltage	I_C= -5A, I_B= -20mA			-4.0	V
V_BE_(on)	Base-Emitter On Voltage	I_C= -3.0A; V_CE= -3V			-2.5	V
I_CBO	Collector Cutoff Current	V_CB= -80V, I_E= 0			-0.2	mA
I_CEO	Collector Cutoff Current	V_CE= -40V, I_B= 0			-0.5	mA
I_EBO	Emitter Cutoff Current	V_EB= -5V; I_C= 0			-2	mA
h_FE-1	DC Current Gain	I_C= -0.5A; V_CE= -3V	1000
h_FE-2	DC Current Gain	I_C= -3.0A; V_CE= -3V	1000
C_OB	Output Capacitance	I_E= 0; V_CB= -10V, f= 0.1MHz			300	pF

是否提供**

是

品牌/商标

ISC

型号/规格

TIP126

应用范围

功率

材料

硅(Si)

*性

PNP型

结构

平面型

封装形式

直插型

封装材料

塑料封装

无锡固电ISC 供应TIP126三*管