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D*CRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max.)@ IC= -5A
·DC Current Gain-
: hFE= 25-100 @IC= -2.5A
·Complement to T*e 2N4913
APPLICATIONS
·Designed for general purpose use in power amplifier and
switching circuits.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -40 | V |
VCEO | Collector-Emitter Voltage | -40 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -5 | A |
IB | Base Current-Continuous | -1 | A |
PC | Collector Power Dissipation@TC=25℃ | 87.5 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
"
是
ISC
2N4904
放大
硅(Si)
PNP型
40(V)
5(A)
87.5(W)
4(MHz)
平面型
直插型
金属封装