无锡固电ISC 供应2N6477三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

140

V

V_CER

Collector-Emitter Voltage R_BE= 100Ω

130

V

V_CEO

Collector-Emitter Voltage                        

120

V

V_CEV

Collector-Emitter Voltage V_BE= -1.5V

140

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

2.5

A

I_CM

Collector Current-Peak

4

A

I_B

Base Current

1

A

P_D

Collector Power Dissipation

@ T_C=25℃

50

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

2.5

℃/W

R_{th j-a}

Thermal Resistance, Junction to Ambient

70

℃/W

SY*OL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA; I_B= 0

120

V

V_CER(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA;R_BE= 100Ω

130

V

V_CEV(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA;V_BE= -1.5V

140

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 1A; I_B= 0.1A

1.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 2.5A; I_B= 0.5A

2.0

V

V_BE(on)-1

Base-Emitter On Voltage

I_C= 1A; V_CE= 4V

1.8

V

V_BE(on)-2

Base-Emitter On Voltage

I_C= 2.5A ; V_CE= 4V

3.0

V

I_CEV

Collector Cutoff Current

V_CE= 130V; V_BE= -1.5V

V_CE= 120V; V_BE= -1.5V ;T_C=150℃

2.0

10

mA

I_CEO

Collector Cutoff Current

V_CE= 80V; I_B= 0

2.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

2.0

mA

h_FE-1

DC Current Gain

I_C= 1A; V_CE= 4V

25

150

h_FE-2

DC Current Gain

I_C= 2.5A; V_CE= 4V

5