无锡固电ISC 供应三*管2SA680

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-100

V

V_CEO

Collector-Emitter Voltage

-100

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous  

-12

A

I_E

Emitter Current-Continuous  

12

A

P_C

Collector Power Dissipation

@T_C=25℃

100

W

T_j

Junction Temperature

150

℃

T_stg

Storage Temperature

-65~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -100mA ;I_B= 0

-100

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= -10mA ;I_C= 0

-5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -10A; I_B= -1A

-3.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= -10A ; V_CE= -5V

-2.5

V

I_CBO

Collector Cutoff Current

V_CB= -50V; I_E= 0

-0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-0.1

mA

h_FE-1

DC Current Gain

I_C= -2A ; V_CE= -5V

40

140

h_FE-2

DC Current Gain

I_C= -7A ; V_CE= -5V

15

C_OB

Output Capacitance

V_CB= -10V; f_test= 1MHz

900

pF

f_T

Current-Gain—Bandwidth Product

I_C= -2A ; V_CE= -5V

6

MHz

R

Y

40-80

70-140