无锡固电ISC 供应三*管2SA744

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-80

V

V_CEO

Collector-Emitter Voltage

-80

V

V_EBO

Emitter-Base Voltage

-6

V

I_C

Collector Current-Continuous  

-8

A

I_B

Base Current-Continuous  

-3

A

P_C

Collector Power Dissipation

@T_C=25℃

70

W

T_j

Junction Temperature

150

℃

T_stg

Storage Temperature

-65~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -50mA ;I_B= 0

-80

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -3A; I_B= -0.3A

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -80V; I_E= 0

-1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= -6V; I_C= 0

-1.0

mA

h_FE

DC Current Gain

I_C= -3A ; V_CE= -4V

30

f_T

Current-Gain—Bandwidth Product

I_E= 0.5A ; V_CE= -12V

15

MHz

Switching times

t_r

Rise Time

I_C= -3A ,R_L= 4Ω, V_CC=-12V

I_B1= -0.2A; I_B2= 0.1A

1.2

μs

t_stg

Storage Time

2.0

μs

t_f

Fall Time

0.55

μs