无锡固电ISC供应2S*274三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

500

V

V_CEO

Collector-Emitter Voltage                        

400

V

V_EBO

Emitter-Base voltage

10

V

I_C

Collector Current-Continuous

10

A

I_B

Base Current-Continuous

3

A

P_C

Collector Power Dissipation

@ T_C=25℃

40

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage                        

I_C= 0.2A; I_B= 0

400

V

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= 1mA; I_E= 0

500

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= 1mA; I_C= 0

10

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 4A; I_B= 0.8A

0.8

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 4A; I_B= 0.8A

1.2

V

I_CBO

Collector Cutoff Current

V_CB= 450V ; I_E= 0

0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= 10V; I_C= 0

0.1

mA

h_FE

DC Current Gain

I_C= 1A; V_CE= 5V

25

55

Switching times

t_on

Turn-on Time

I_C= 5A , I_B1= 0.5A; I_B2= -1A;

R_L= 30Ω; P_W=20μs;

Duty Cycle≤2%

1.0

μs

t_stg

Storage Time

2.5

μs

t_f

Fall Time

0.5

μs

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

3.0

℃/W