无锡固电ISC 供应BU326三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

800

V

V_CEO

Collector-Emitter Voltage

375

V

V_EBO

Emitter-Base Voltage

10

V

I_C

Collector Current-Continuous

6

A

I_CM

Collector Current-Peak  

8

A

I_B

Base Current-Continuous

3

A

P_C

Collector Power Dissipation

@ T_C=25℃

75

W

T_J

JunctionTemperature

200

℃

T_stg

StorageTemperature Range

-65~200

℃

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

2.33

℃/W

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 0.1A; I_B= 0; L= 25mH

375

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 2.5A; I_B= 0.5A

1.5

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 4A; I_B= 1.25A

3.0

V

V_BE(sat)-1

Base-Emitter Saturation Voltage

I_C= 2.5A; I_B= 0.5A

1.4

V

V_BE(sat)-2

Base-Emitter Saturation Voltage

I_C= 4A; I_B= 1.25A

1.6

V

I_C*

Collector Cutoff Current

V_CE=800V; V_BE= 0

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 10V; I_C= 0

10

mA

h_FE

DC Current Gain

I_C= 1A; V_CE= 5V

25

f_T

Current-Gain—Bandwidth Product

I_C= 0.2A; V_CE= 10V, f= 1.0MHz

4

MHz

Switching Times

t_on

Turn-On Time

I_C= 2.5A; I_B1= 0.5A; I_B2= -1A;

V_CC= 250V

0.5

μs

t_stg

Storage Time

3.5

μs

t_f

Fall Time

0.5

μs