无锡固电ISC 供应2*1373三*管
地区：江苏 无锡
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产品属性
相关推荐
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·Wide Area of Safe Operation
·Complement to T*e 2SD2066
APPLICATIONS
·Designed for high power amplifications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -160 | V |
VCEO | Collector-Emitter Voltage | -160 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -12 | A |
ICP | Collector Current-Pulse | -20 | A |
PC | Collector Power Dissipation @ TC=25℃ | 120 | W |
Collector Power Dissipation @ Ta=25℃ | 2.5 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -8A; IB= -0.8A |
|
| -2.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -8A; VCE= -5V |
|
| -1.8 | V |
ICBO | Collector Cutoff Current | VCB= -160V; IE= 0 |
|
| -50 | μA |
IEBO | Emitter Cutoff Current | VEB= -3V; IC= 0 |
|
| -50 | μA |
hFE-1 | DC Current Gain | IC= -20mA; VCE= -5V | 20 |
|
|
|
hFE-2 | DC Current Gain | IC= -1A; VCE= -5V | 60 |
| 200 |
|
hFE-3 | DC Current Gain | IC= -8A; VCE= -5V | 20 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -5 V; f= 1MHz |
| 15 |
| MHz |
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 400 |
| pF |
u hFE-2Cl*ifications
Q | S | P |
60-120 | 80-160 | 100-200 |
"
是
ISC
2*1373
放大
硅(Si)
PNP型
平面型
直插型
塑料封装
