无锡固电供应ISC三*管MJ11011

 iscSilicon PNP Darlington Power Transistor

D*CRIPTION          

·Collector-Emitter Breakdown Voltage-

  : V_(BR)CEO= -60V(Min.)

·High DC Current Gain-

  : h_FE= 1000(Min.)@I_C= -20A

·LowCollector Saturation Voltage-

: V_{CE (sat)}= -3.0V(Max.)@I_C= -20A

·Complement to T*e MJ11012

APPLICATIONS

·Designed for use as output devices in complementary

  general purpose amplifier applications.

Absolute maximum ratings (T_a=25℃)