无锡固电ISC供应2SD1212三*管
地区：江苏 无锡
认证：
无
图文详情
产品属性
相关推荐
·High Collector Current:: IC= 12A
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@IC= 5A
·Complement to T*e 2*903
APPLICATIONS
·Designed for relay drivers, high-speed inverters, converters,
and other general large-current switching applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 30 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 12 | A |
ICM | Collector Current-Peak | 20 | A |
PC | Total Power Dissipation @ TC=25℃ | 35 | W |
Total Power Dissipation @ Ta=25℃ | 1.75 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 1mA ; RBE=∞ | 30 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= 1mA ; IE= 0 | 60 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= 1mA ; IC= 0 | 6 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 5A; IB= 0.25A |
|
| 0.4 | V |
ICBO | Collector Cutoff Current | VCB= 40V; IE= 0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 4V; IC= 0 |
|
| 0.1 | mA |
hFE-1 | DC Current Gain | IC= 1A; VCE= 2V | 70 |
| 280 |
|
hFE-2 | DC Current Gain | IC= 6A; VCE= 2V | 30 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 5V |
| 120 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | RL= 2Ω, VCC=10V IC= 5A; IB1= -IB2= 0.5A |
| 0.2 |
| μs |
tstg | Storage Time |
| 0.5 |
| μs | |
tf | Fall Time |
| 0.03 |
| μs | |
u hFE-1Cl*ifications
Q | R | S |
70-140 | 100-200 | 140-280 |
是
ISC
2SD1212
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
