无锡固电ISC供应2SD1662三*管
地区：江苏 无锡
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D*CRIPTION
·High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·LowCollector Saturation Voltage
: VCE(sat)= 1.5V(Max.)@IC= 15A
APPLICATIONS
·Designed for high current switching application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 100 | V |
VCEO | Collector-Emitter Voltage | 100 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 15 | A |
IB | Base Current- Continuous | 1 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA, IB= 0 | 100 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 15A ,IB= 25mA |
|
| 1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 15A ,IB= 25mA |
|
| 2.2 | V |
ICBO | Collector Cutoff current | VCB= 100V, IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 10 | mA |
hFE | DC Current Gain | IC= 15A; VCE= 3V | 1000 |
|
| |
COB | Output Capacitance | IE= 0;VCB= 10V;ftest= 1.0MHz |
| 280 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 5V |
| 14 |
| MHz |
Switching Times | ||||||
ton | Turn-On Time | IB1= -IB2= 10mA; RL= 10Ω; VCC= 50V |
| 1.0 |
| μs |
tstg | Storage Time |
| 2.0 |
| μs | |
tf | Fall Time |
| 1.5 |
| μs | |
是
ISC
2SD1662
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
