无锡固电ISC供应2S*151三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

60

V

V_CEO

Collector-Emitter Voltage                        

40

V

V_EBO

Emitter-Base Voltage

7

V

I_C

Collector Current-Continuous

15

A

I_CM

Collector Current-Peak

30

A

I_B

Base Current-Continuous

2

A

I_BM

Base Current-Peak

3

A

P_T

Total Power Dissipation

@ T_C=25℃

30

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 0.1A; I_B= 0

40

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 7.5A; I_B= 0.4A

0.3

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 7.5A; I_B= 0.4A

1.2

V

I_CBO

Collector Cutoff Current

At rated Voltage

100

μA

I_CEO

Collector Cutoff Current

At rated Voltage

100

μA

I_EBO

Emitter Cutoff Current

At rated Voltage

100

μA

h_FE

DC Current Gain

I_C= 7.5A ; V_CE= 2V

70

f_T

Current-Gain—Bandwidth Product

I_C= 1.5A ; V_CE= 10V

50

MHz

Switching times

t_on

Turn-on Time

I_C= 7.5A, I_B1= 0.75A; I_B2= -0.75A;

R_L= 4Ω; V_BB2= 4V

0.3

μs

t_stg

Storage Time

1.5

μs

t_f

Fall Time

0.5

μs

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

4.16

℃/W