无锡固电ISC供应2SD1577三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                        

1500

V

V_C*

Collector-Emitter Voltage                        

1500

V

V_CEO

Collector-Emitter Voltage                        

700

V

V_EBO

Emitter-Base Voltage

   6

V

I_C

Collector Current- Continuous

5

A

I_CP

CollectorCurrent-Peak

17

A

I_BP

BaseCurrent-Peak

3.5

A

I_BP

Reverse Base Current-Peak

-2.5

A

P_C

Collector Power Dissipation

@ T_a=25℃

3

W

Collector Power Dissipation

@ T_C=25℃

100

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 1mA ; I_C= 0

6

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 4.5A; I_B= 2A

2.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 4.5A; I_B= 2A

1.3

V

I_CBO

Collector Cutoff Current

V_CB= 750V ; I_E= 0

50

μA

V_CB= 1500V ; I_E= 0

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 6V ; I_C= 0

1.0

mA

h_FE

DC Current Gain

I_C= 4A ; V_CE= 10V

4

15

f_T

Current-Gain—Bandwidth Product

I_C= 0.5A ; V_CE= 10V, f_test= 0.5MHz

2

MHz

Switching times

t_stg

Storage Time

I_C= 4A , I_B1(end)= 1.5A ; L_B= 10μH

11

μs

t_f

Fall Time

1.0

μs