无锡固电ISC供应三*管2SD1046

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

150

V

V_CEO

Collector-Emitter Voltage                        

120

V

V_EBO

Emitter-Base Voltage

6

V

I_C

Collector Current-Continuous

8

A

I_CP

Collector Current-Pulse

12

A

P_C

Collector Power Dissipation

@ T_C=25℃

80

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-40~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 50mA ; R_BE=∞

120

V

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= 5mA; I_E= 0

150

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= 5mA; I_C= 0

6

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 5.0A; I_B= 0.5A

2.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= 1A ; V_CE= 5V

1.5

V

I_CBO

Collector Cutoff Current

V_CB= 80V; I_E= 0

100

μA

I_EBO

Emitter Cutoff Current

V_EB= 4V; I_C= 0

100

μA

h_FE-1

DC Current Gain

I_C= 1A; V_CE= 5V

60

200

h_FE-2

DC Current Gain

I_C= 5A; V_CE= 5V

20

C_OB

Output Capacitance

I_E= 0;V_CB= 10V;f_test= 1.0MHz

160

pF

f_T

Current-Gain—Bandwidth Product

I_C= 1A ; V_CE= 5V

15

MHz

Switching times

t_on

Turn-on Time

I_C= 1A ,R_L= 20Ω,

I_B1= -I_B2= 0.1A,V_CC=20V

0.22

μs

t_stg

Storage Time

6.66

μs

t_f

Fall Time

1.02

μs

D

E

60-120

100-200