无锡固电ISC 供应三*管2*509

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-60

V

V_CEO

Collector-Emitter Voltage                        

-60

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-4

A

I_CM

Collector Current-Peak

-10

A

P_C

Collector Power Dissipation

@ T_C=25℃

35

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-40~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -2A; I_B= -0.2A

-1.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= -1A; V_CE= -2V

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -20V; I_E= 0

-100

μA

I_EBO

Emitter Cutoff Current

V_EB= -4V; I_C= 0

-1

mA

h_FE-1

DC Current Gain

I_C= -1A; V_CE= -2V

40

320

h_FE-2

DC Current Gain

I_C= -0.1A ; V_CE= -2V

40

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A; V_CE= -5V;f_test= 1.0MHz

8

MHz

C

D

E

F

40-80

60-120

100-200

160-320