无锡固电ISC 供应NPN 功率晶体管 2SD1654

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage                         

I_C= 100mA; R_BE=∞

800

V

V_(BR)CBO

Collector-Base Breakdown Voltage                         

I_C= 5mA; I_E= 0

1500

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 200mA; I_C= 0

7

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 2.5A; I_B= 0.8A

8.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 2.5A; I_B= 0.8A

1.5

V

I_CBO

Collector Cutoff Current

V_CB= 800V ; I_E= 0

10

μA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

1.0

mA

h_FE

DC Current Gain

I_C= 0.5A; V_CE= 5V

8

t_f

Fall Time

I_C= 3A, I_B1= 0.8A; I_B2= -1.6A

0.7

μs