无锡固电ISC 供应2*1231三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-110

V

V_CEO

Collector-Emitter Voltage                        

-100

V

V_EBO

Emitter-Base Voltage

-6

V

I_C

Collector Current-Continuous

-25

A

I_CP

Collector Current-Pulse

-40

A

I_B

Base Current-Continuous

-8

A

P_C

Collector Power Dissipation

@ T_a=25℃

3

W

Collector Power Dissipation

@ T_C=25℃

120

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -5mA ; R_BE=∞

-100

V

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= -1mA; I_E= 0

-110

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= -1mA; I_C= 0

-6

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -10A; I_B= -1A

-0.8

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -10A; I_B= -1A

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -100V; I_E= 0

-100

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-100

μA

h_FE-1

DC Current Gain

I_C= -2.5A; V_CE= -2V

50

140

h_FE-2

DC Current Gain

I_C= -10A; V_CE= -2V

20

P

Q

50-100

70-140