无锡固电——ISC 供应2N6577三*管

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供应2N6577三*管,TO-3,有意者请联系

D*CRIPTION                                               

·Built-in Base-Emitter Shunt Resistors

·High DC current gain-

: hFE= 2000 (Min) @ IC= 4A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 90V(Min)

 

 

APPLICATIONS

·Power switching

·Hammer drivers

·Series and shunt regulator

·Audio amplifiers

 

 

ABSOLUTE MAXIMUM RATINGS(TC=25)

SY*OL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

90

V

VCEO

Collector-Emitter Voltage

90

V

VEBO

Emitter-Base Voltage

7.0

V

IC

Collector Current -Continuous

15

A

ICP

Collector Current-Peak 

30

A

IB

Base Current

0.25

A

PC

Collector Power Dissipation@TC=25

120

W

Tj

Junction Temperature

200

Tstg

Storage Temperature

-65~200

ELE*RICAL CHARA*ERISTICS

TC=25unless otherwise specified

SY*OL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA ; IB= 0

90

 

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 10A; IB= 0.1A

 

2.8

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 15A; IB= 0.15A

 

4.0

V

VBE(sat)-1

Base-Emitter Saturation voltage

IC= 10A; IB= 0.1A

 

3.5

V

VBE(sat)-2

Base-Emitter Saturation voltage

IC= 15A; IB= 0.15A

 

4.5

V

ICEO

Collector Cutoff current

VCE= 90V; IB= 0

 

1.0

mA

ICBO

Collector Cutoff current

VCB= 90V; IE= 0

 

0.5

mA

ICER

Collector Cutoff current

VCE= 90V; RBE= 10K, TC=150

 

5.0

mA

ICEX

Collector Cutoff current

VCE= 90V; VBE= -1.5V; TC=175

 

5.0

mA

IEBO

Emitter Cut-off current

VEB= 7V; IC= 0

 

7.5

mA

hFE-1

DC Current Gain

IC= 0.4A; VCE= 3V

200

 

 

hFE-2

DC Current Gain

IC= 4A; VCE= 3V

2000

20000

 

hFE-3

DC Current Gain

IC= 10A; VCE= 3V

500

 

 

hFE-4

DC Current Gain

IC= 15A; VCE= 4V

100

 

 

Switching Times

td

Delay Time

VCC= -30V; IC= 10A; IB1= -IB2= -0.1A,

tp= 300μs; Duty Cycle2.0%

 

0.15

μs

tr

Rise Time

 

1.0

μs

ts

Storage Time

 

2.0

μs

tf

Fall Time

 

7.0

μs

是否提供**

品牌/商标

ISC

型号/规格

2N6577

应用范围

达林顿

材料

硅(Si)

*性

NPN型

集电*允许电流ICM

15(A)

集电*耗散功率PCM

120(W)

结构

平面型

封装形式

直插型

封装材料

塑料封装