无锡固电ISC 供应2SA473晶体管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-30

V

V_CEO

Collector-Emitter Voltage                        

-30

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-3

A

I_E

Emitter Current-Continuous

-3.0

A

P_C

Total Power Dissipation

@ T_C=25℃

10

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -10 mA; I_B= 0

-30

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= -1mA; I_C= 0

-5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -2A; I_B= -0.2A

-0.8

V

V_BE(on)

Base-Emitter On Voltage

I_C= -0.5A; V_CE= -2V

-1.0

V

I_CBO

Collector Cutoff Current

V_CB= -20V; I_E= 0

-1.0

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-1.0

μA

h_FE-1

DC Current Gain

I_C= -0.5A; V_CE= -2V

70

240

h_FE-2

DC Current Gain

I_C= -2.5A; V_CE= -2V

25

C_OB

Collector Output Capacitance

I_E= 0; V_CB= -10V; f= 1MHz

40

pF

f_T

Current-Gain—Bandwidth Product

I_E= 0.5A; V_CE= -2V

100

MHz

O

Y

70-140

120-240