无锡固电ISC 供应三*管2SA658

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-70

V

V_CEO

Collector-Emitter Voltage

-50

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous  

-7

A

I_B

Base Current

-2

A

P_C

Collector Power Dissipation

@T_C=25℃

50

W

T_j

Junction Temperature

150

℃

T_stg

Storage Temperature

-65~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -50mA; I_B= 0

-50

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5A; I_B= -1A

-2.0

V

V_BE(sat)

Base-EmitterSaturationVoltage

I_C= -5A; I_B= -1A

-2.5

V

I_CBO

Collector Cutoff Current

V_CB= -70V; I_E= 0

-0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-5

mA

h_FE-1

DC Current Gain

I_C= -1A; V_CE= -5V

30

300

h_FE-2

DC Current Gain

I_C= -5A; V_CE= -5V

15

C_OB

Collector Output Capacitance

I_E= 0; V_CB= -10V; f= 1MHz

150

pF

f_T

Current-Gain—Bandwidth Product

I_C= -1A; V_CE= -10V

5

MHz