无锡固电ISC BU608三*管

D*CRIPTION

·High Voltage: V_CEV= 400V(Min)

·Fast Switching Speed-

: t_f= 0.5μs(Max)

·Low Saturation Voltage-

: V_CE(sat)= 1.0V(Max)@ I_C= 6A

APPLICATIONS

·Designed for use in horizontal deflection output stages

of TV’s and CRT’s

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	400	V
V_CEV	Collector-Emitter Voltage	400	V
V_CEO	Collector-Emitter Voltage	200	V
V_EBO	Emitter-Base Voltage	6	V
I_C	Collector Current-Continuous	7	A
I_CM	Collector Current-Peak	10	A
I_B	Base Current	4	A
P_C	Collector Power Dissipation @ T_C=25℃	60	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-65~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 100mA ;I_B= 0	200			V
V_CE(_sat₎	Collector-Emitter Saturation Voltage	I_C= 6A; I_B= 1.2A			1.0	V
V_BE(_sat₎	Base-Emitter Saturation Voltage	I_C= 6A; I_B= 1.2A			1.5	V
h_FE	DC Current Gain	I_C= 2A; V_CE= 5V;		15
I_CEV	Collector Cutoff Current	V_CE= 400V; V_BE= -1.5V			15	mA
I_EBO	Emitter Cutoff Current	V_EB= 6V; I_C= 0			400	mA
f_T	Current-Gain—Bandwidth Product	I_C= 0.5A ; V_CE= 10V, f_test= 1MHz	10			MHz
t_f	Fall Time	I_C= 6A; I_B1= -I_B2= 1.2A, V_CC= 40V			0.5	μs

是否提供**

是

品牌/商标

ISC

型号/规格

BU608

应用范围

放大

材料

硅(Si)

*性

NPN型

结构

平面型

封装形式

直插型

封装材料

塑料封装

无锡固电ISC 供应BU608三*管